By B.L. Theraja, R. S. Sedha
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Extra info for A Textbook of Electrical Technology Volume IV - Electronic Devices and Circuits
16. 23. (d) (d) (d) (a) 3. 10. 17. 24. (c) (d) (a) (a) 4. (b) 11. (d) 18. (a) 5. (b) 12. (b) 19. (c) 6. (b) 13. (b) 20. (a) 7. (b) 14. (b) 21. C. C. 1. P-N Junction Diode (a) Construction It is a two-terminal device consisting of a P-N junction formed either in Ge or Si crystal. Its circuit symbol is shown in Fig. 1 (a). The P-and N-type regions are referred to as anode and cathode respectively. In Fig. 1 (b), arrowhead indicates the conventional direction of current flow when forward-biased. It is the same direction in which hole flow takes place.
29 (b). This directed flow of + electrons results in a net charge displacement in a definite +A direction. This type of motion is + known as drift and the phenomenon is referred to as l process of conduction by drift (a) charge. The drift velocity (v) of (b) the electrons is dependent upon Fig. 29 the electron mobility (µe) and the applied electric field E. e. electron density (per m ) l = length of the conductor (m) E = V /l — applied electric field (V/m) Now, electric current flowing in any conductor is given by the amount of charge which flows in one second across any plane of the conductor (Fig.
If there are 5 × 10 Si atoms/m , calculate its conductivity. By what factor has the conductivity increased ? 17 m / V-s respectively. 5 × 10 per m , calculate the conductivity. d. 15 cm. 5 × 10 /m ; Semiconductor Physics 5. 6. 7. 2057 (iii) the total current. 38 mA] (Applied Electronics & Circuits, Grad. E. 1987) −3 −4 −1 The resistivity of a dopoed silicon material is 9 × 10 . 6 × 10 Coulomb . −19 Assuring single carrier conduction, find the mobility and density of charge carriers. 6 × 10 Coulomb.
A Textbook of Electrical Technology Volume IV - Electronic Devices and Circuits by B.L. Theraja, R. S. Sedha